Step into a career with ASM, where cutting edge technology meets collaborative culture.
For over 55 years ASM has been ahead of what’s next, at the forefront of innovation and what’s technologically possible. With more than 4,500 ASMers representing 70 nationalities, our people and our advanced semiconductor devices are playing a crucial role in trends such as 5G, cloud computing, AI, and autonomous driving. But we’re more than just a tech company. We value diversity, inclusion and sustainability as we strive to make a positive impact on the world. Our development programs help support your growth, shaping your future and pushing the boundaries of innovation to unleash potential.
Internship Opportunity: Advanced gate stack Device Fabrication & Characterization
About the Internship
We are offering a hands-on internship opportunity for students or early-career researchers interested in microelectronics, semiconductor fabrication, and device characterization. This internship provides exposure to cutting-edge High-K Metal Gate (HKMG) technology innovations through practical fabrication and electrical measurement of capacitor structures on highly scaled gate stacks.
Key Learning Objectives:
- Gain experience in microelectronic device fabrication, including MOS capacitors (MOSCAPs) and metal-insulator-metal capacitors (MIMCAPs).
- Develop an understanding of HKMG technology advancements and their impact on device performance including multi-Vt technology and reliability assessment.
- Learn and apply various fabrication techniques, including deposition, lithography based patterning, and dry-etching.
- Conduct electrical characterization of fabricated devices to assess key performance metrics such as work function shifts and EOT.
- Investigate the impact of individual processing steps on the electrical properties of HKMG-based devices and understand the role of defects on HKMG work function tuning.
Key Responsibilities:
- Participate in the fabrication process of scaled MOSCAPs in a semiconductor cleanroom environment.
- Perform electrical measurements (e.g., CV, IV, BTI, TDDB) to evaluate device characteristics.
- Analyse the effect of each fabrication step on electrical readouts, including threshold voltage shifts, leakage currents, and capacitance variations.
- Document experimental results, maintain lab records, and contribute to technical discussions on process optimizations.
- Collaborate with engineers and scientists to interpret experimental data and refine fabrication methodologies.
Preferred Qualifications:
- Currently pursuing or recently completed a Master’s degree or PhD in Electrical Engineering, Material Science, Physics, Nanotechnology, or a related field.
- Basic knowledge of semiconductor physics and device processing techniques.
- Experience with device characterization tools (e.g., probe station, LCR meter, semiconductor parameter analyzer) is a plus.
- Strong analytical skills and a keen interest in semiconductor fabrication and measurement techniques.
- Ability to work independently and in a team-oriented research environment.
What You’ll Gain:
- Hands-on experience in semiconductor fabrication and metrology.
- A deeper understanding of HKMG technology innovations and their role in advanced semiconductor devices.
- Exposure to industry-relevant research and problem-solving methodologies.
- An opportunity to contribute to ongoing research in advanced microelectronics and nano-device engineering.
Apply today to be part of what’s next.
We make the tech that enables the chips in devices which improve lives around the world. We do this with an eye to the future, pushing the boundaries of what’s possible through cutting-edge innovation, and driving the next wave of technological breakthroughs that shape how we live, work, and connect.
To learn more about ASM, find us at asm.com and on LinkedIn, Facebook, Instagram, X and YouTube.
ASM is an equal opportunity employer and considers qualified applicants for employment without regard to race, color, religion, age, nationality, social or ethnic origin, sexual orientation, gender, gender identify or expression, marital status, pregnancy, political affiliation, disability, genetic information, veteran status, or any other characteristic protected by law.
